Extended Data Fig. 5: Reconstruction quality evaluation between burst and non-burst ptychography.

Comparison between burst ptychography in a and mixed-state ptychography in b shows that the gates and contacts at the transistor layer are well resolved with burst ptychography, which is not the case when using mixed-state ptychography. This discrepancy indicates that the additional probe modes in mixed-state ptychography are trying to account for the unknown instabilities, which were recovered with burst ptychography and are shown for a single scan position in c (taken from Fig. 2). Additionally, the main probe mode power of burst ptychography in d is 93%, whereas for mixed-state ptychography in e it is only 43%.