Extended Data Fig. 6: Integrated circuit elemental composition analysis using EDX.
From: High-performance 4-nm-resolution X-ray tomography using burst ptychography
a, Throughout the IC, the most abundant elements are Cu (for the interconnects) and Si, O for the surrounding dielectric. The concentration of O is higher at the global interconnect layer compared to the other layers, indicating the presence of two dielectric materials which are separated by dashed lines. b, Increased magnification within the non-global layers shows material differences between the interconnect and transistor layers. The element concentration is plotted on a relative scale, in arbitrary units, with respect to each other.
