Extended Data Fig. 7: Transistor elemental composition analysis using EDX.
From: High-performance 4-nm-resolution X-ray tomography using burst ptychography
EDX analysis of the transistor layer perpendicular to the fin direction. Source/drain contacts contain mostly Co, while the gates consist of Ti and Al. There is a significant concentration of Si between the interconnects and contacts/gates. The element concentration is plotted on a relative scale, in arbitrary units, with respect to each other.
