Extended Data Fig. 7: Electrical-transport results for a 45° twisted CrSBr monolayer/hBN monolayer/CrSBr monolayer MTJ.
From: Twist-assisted all-antiferromagnetic tunnel junction in the atomic limit
a,b, Field-orientation dependence of the tunnelling current in the a–b plane. The two blue arrows indicate the sweeping direction of field. ±1.5 T field is used. c,d, Same as a and b except for sweeping field between ±0.3 T. e, Tunnelling current versus field with field oriented along the easy axis of the top CrSBr flake. The inset shows a close-up of ZF adjacency. ±9 T field is used. f, Demonstration of ZF NV related to the hard axes. ±0.3 T field is used. g, Demonstration of ZF NV related to the easy axis. ±0.15 T field is used. h, ZF-TMR. A constant DC bias of 25 mV is applied in a–g.
