Fig. 3: Electrical-transport results for a 35° twisted CrSBr bilayer/bilayer MTJ.

a, Schematic of twisted CrSBr bilayers. Top view in the top panel and side view in the bottom panel. b and c crystal axes of the bottom bilayer are indicated. Blue, yellow and red balls correspond to Cr, S and Br, respectively. b, Conductance versus temperature at ZF. Inset, optical image of the device. The red and white dashed lines outline the bottom and top CrSBr bilayer flakes, respectively, and the a axis of each flake is indicated by the corresponding arrows. Scale bar, 10 μm. c, Field-orientation dependence of the tunnelling current for field oriented within the a–b plane. ±0.3 T field sweep range and 15 mV DC bias are used. The two vertical blue arrows along the y axes indicate the sweeping direction of the field, backward sweeping for the top panel and forward sweeping for the bottom panel. The inverted triangles with angles indicate the position of the crystal axes. T-a, the a axis of the top flake; B-b, the b axis of the bottom flake; and so on. The double-headed arrows with different colours mark the positions at which ZF NV appears. d, Representatives of the two groups of ZF NV related to the easy axis (ϕ = 130°) and the hard axis (ϕ = 65°), respectively, extracted from c. e, I–V curves at ZF and 9 T. f, Extracted ZF-TMR ratio as a function of bias based on the ZF I–V curves in e. Inset, ZF-TMR ratio of a 10° twisted device.