Extended Data Fig. 2: Further electrical-transport results of a 35° twisted bilayer/bilayer CrSBr MTJ at 2 K.
From: Twist-assisted all-antiferromagnetic tunnel junction in the atomic limit

a,b, Field-orientation dependence of the tunnelling current in the a–b plane. The two blue arrows indicate the field-sweeping direction, backward sweeping in a and forward sweeping in b. ±1.5 T field and 15 mV DC bias are used. Two humps appear in the vicinity of the a axes of each flake, as marked by stars. ZF NV related to b axes of each flake is observed in the range outlined by the white dotted ellipse. c–f, Four current versus magnetic field hysteresis loops at ϕ = 130°. ZF NV appears in the first loop (c) and fourth loop (f). However, the second loop (d) and third loop (e) both show similar low and high conductivities, respectively. This is because of the pinned bilayer being flipped after a sufficiently strong field is applied. ±1.5 T field and 15 mV DC bias are used. g–j, Several current versus magnetic field hysteresis loops. g, Ten loops for the field oriented along ϕ = 130°. h, Three loops for the field oriented along ϕ = 130° after a large field stimulation. g and h are mirror images of each other. i, Ten loops for the field oriented along ϕ = 65°. j, Ten loops for the field oriented along ϕ = 120°, showing unstable ZF NV. ±0.3 T field and 15 mV DC bias are used.