Extended Data Fig. 6: Feasibility of dualtronic device processing.
From: Using both faces of polar semiconductor wafers for functional devices
a,b, Log-scale transfer curves (a) and output curves (b) of a N-polar HEMT before (dashed) and after (solid) the LED fabrication, showing a negligible change in gate leakage current, on resistance and output current. The shift in threshold voltage after the LED fabrication is estimated to be about 0.2 V.
