Extended Data Fig. 9: 2 × 2 μm2 atomic force topography of the +c (LED) surface after LED growth (a) and LED and HEMT growth (b).
From: Using both faces of polar semiconductor wafers for functional devices
The +c surface morphology of the LED is not affected by the secondary N-polar growth procedures, including gallium mounting, HEMT growth and wet chemical piranha treatment.
