Extended Data Fig. 1: Room-temperature electron density and mobility of the N-polar HEMTs presented in this study, benchmarked against state-of-the-art N-polar III-nitride HEMTs reported in the literature13,24,25,26,41,42,43,44,45. | Nature

Extended Data Fig. 1: Room-temperature electron density and mobility of the N-polar HEMTs presented in this study, benchmarked against state-of-the-art N-polar III-nitride HEMTs reported in the literature13,24,25,26,41,42,43,44,45.

From: Using both faces of polar semiconductor wafers for functional devices

Extended Data Fig. 1

To the best of our knowledge, the N-polar HEMT investigated in this study demonstrates the lowest reported sheet resistance and one of the highest electron mobilities so far.

Source Data

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