Extended Data Fig. 1: Sample and device characterization.
a, Three-dimensional schematic of a tWSe2 dual-gated device. Both the top gate (TG) and bottom gate (BG) are made of hBN and few-layer graphite (Gr). The tWSe2 sample is contacted by Pt electrodes. The Pd contact gates (CG) and split gates (SG) turn on the Pt contacts and turn off the parallel channels, respectively. b, Optical micrograph of the 3.65° device. Specific features of interest are BG (enclosed by the black dashed line), TG (black solid line), uniform moiré region (red dashed line) and contact electrode 1–6. The scale bar is 4 µm. c,d, Filling factor dependence of two-terminal resistance R2t for different contact pairs at T = 1 K and B = 0 T. The sample is an insulator at ν ≈ 1 for E = 55 mV/nm (c). The variation in filling factor for the resistance peak is about 0.025, which corresponds to a disorder density of 1 × 1011 cm−2. The sample is a metal at ν ≈ 1 for E = 100 mV/nm (d) and the four-terminal resistance is below 350 Ω. The contact resistance is determined from R2t to be 10–40 kΩ.
