Extended Data Fig. 6: Hypotaxial growth of MoS2 on various substrates.
From: Hypotaxy of wafer-scale single-crystal transition metal dichalcogenides
a, Schematic process for hypotaxial growth of MoS2 at 400 °C on graphite, HfO2, and Au. b-d, HR-TEM images and corresponding FFT patterns (insets) of hypotaxially grown MoS2 on graphite (b), HfO2 (c), and Au (d), respectively. The 10 nm-thick HfO2 and 50 nm-thick Au film were deposited by atomic layer deposition (ALD) method and e-beam evaporation, respectively. Thanks to the unique characteristic of hypotaxy, the MoS2 can be grown regardless of the crystal structures of the substrates.
