Extended Data Fig. 10: Device performances of hypotaxial grown 1L-MoS2 with metal electrodes of Al/Cr/Au.
From: Hypotaxy of wafer-scale single-crystal transition metal dichalcogenides

Transfer curves (Ids−Vgs) of back-gated hypotaxially grown 1L-MoS2 device with Al/Cr/Au contacts, showing high Ion/Ioff of > 109 and field-effect mobility of 79 cm2 V−1s−1. The linear output curves (Ids−Vds) in the inset show that the metal contacts are ohmic-like.