Extended Data Fig. 1: Comparison of the MoS2 films grown by the conventional sulfurization and the hypotaxy through graphene.
From: Hypotaxy of wafer-scale single-crystal transition metal dichalcogenides
a, Schematic of the MoS2 growth processes for conventional sulfurization and hypotaxy through graphene. The Mo film deposited on a SiO2 substrate by e-beam evaporation was partially covered by exfoliated 1L-Gr. For sulfurization, 20 sccm of H2S and 130 sccm of argon gas were supplied at 1000 °C for 2 h. The uncovered Mo film turns into randomly oriented MoS2 layers, while the graphene-covered Mo film transforms into a uniformly layered MoS2 structure through the formation of MoS2 nuclei that are crystallographically aligned with the top graphene layer. b,c, Raman spectra of conventionally sulfurized MoS2 (b) and hypotaxially grown MoS2 (c) before and after the sulfurization process. The cross-sectional STEM images in the insets shows the morphologies of two samples.
