Figure 1
From: Split-gated point-contact for electrostatic confinement of transport in MoS2/h-BN hybrid structures
(a) A sketch of the device drawn to scale, with all the layers labelled. The top inset shows the optical image of the MoS2 flake and the bottom inset shows the Raman spectra of the MoS2 showing characteristic Raman peaks. (b) Left: AFM image of the device. Right: AFM height profiles of the MoS2, h-BN (1) and h-BN (2) flakes showing thickness of 3.5 nm, 5 nm and 6 nm respectively. (c) SEM image of the device showing the point-contact with a lithographic length of 280 nm and width 220 nm. The drain and source contacts are marked as D and S respectively. (d) Conductance versus back-gate voltage at four different temperatures. The inset shows I-V characteristics at 300 K, for various back gate voltages.
