Figure 5
From: Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure
AFM images of (a) the as grown Ge0.875Sn0.125, and the sample after (b) 5 cycle and (c) 8 cycle digital etch. AFM images of (d) the GeOI sample, and the sample after (e) 11 cycle digital etch. (f) Surface RMS roughness evolution with cycle number. The Ge1−x Sn x surface remains smooth after digital etch.
