Figure 6
From: Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1−x Sn x ) Fin Structure
(a) Etch rate as a function of oxidation time for Ge and Ge0.875Sn0.125. The oxide layer thickness grows logarithmically with the oxidation time and saturates fast. (b) Etched thickness versus cycle number under different RF power and (c) extracted etch rate. The etch rate decreases with decreasing RF power.
