Table 1 Overview of samples.

From: Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays

Sample #

1

2

3

4

5

6

7

8

9

10

Fluence (1013/cm2)

3

3

10

10

30

30

100

100

300

300

 I sc (mA)

67.49

67.30

67.57

67.22

65.59

66.81

65.86

65.48

63.14

63.74

 V oc (V)

2.75

2.74

2.70

2.70

2.66

2.66

2.58

2.58

2.47

2.45

 P m (mW)

151.2

150.3

147.9

144.0

142.3

144.8

136.9

134.6

120.9

116.9

InGaP

 τ 1

0.526

0.444

0.504

0.554

0.493

0.464

0.475

0.458

0.488

0.473

 τ 2

11.84

12.13

12.59

16.61

9.92

9.69

7.54

8.17

4.46

4.38

 τ 3

3.11

3.50

3.42

3.87

3.00

2.85

2.26

1.36

1.21

2.06

GaAs

 τ 1

0.342

0.352

0.261

0.299

0.259

0.285

0.285

0.301

0.257

0.297

 τ 2

6.94

7.38

2.54

2.63

0.985

1.04

0.400

0.381

0.260

0.273

 τ 3

1.00

1.03

0.692

0.736

0.546

0.538

0.400

0.381

0.260

0.273

  1. The table shows the irradiation fluence for each sample, and the final I–V parameters and PL decay time constants for the InGaP and GaAs subcells after irradiation.
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