Figure 1
From: High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide
High-frequency GFET. (a) Optical image of one of the fabricated GFETs with the gate length L = 1.1 μm. Graphene stripe cannot be seen as it is completely covered by the contacts. (b) Schematic of the central part of the GFET. Source (S) and drain (D) contacts (Au; yellow) are separated by an underlap (length u) from the gate (G) contact (Al; red core), which is covered by an insulating layer (AlOx; gray shell). Width of graphene stripes \({W}_{{\rm{s}}}\) was 5, 20 and 50 μm. All GFETs had the same contact width (~50 μm) regardless of the stripe width. The channel width \(W=2{W}_{{\rm{s}}}\). (c) Scanning electron microscopy image of the central part of one the fabricated GFETs with the gate length L = 1 μm. The underlap is \(u=100\) nm.
