Figure 2
From: High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide
Output characteristics and small-signal conductances of the fabricated GFETs in ambient air. (a) Drain current \({I}_{{\rm{D}}}\) as a function of \({V}_{{\rm{DS}}}\) for different \({V}_{{\rm{GS}}}\) in a GFET with \(W=10\) μm and \(L=1\) μm. The onset of saturation is at \({V}_{{\rm{DS}}}={V}_{{\rm{GS}}}-{V}_{0}\) and it moves to larger \(|{V}_{{\rm{D}}S}|\) at larger \(|{V}_{{\rm{G}}S}|\). (b) The transconductance \({g}_{{\rm{m}}}\) and output conductance \({g}_{{\rm{d}}}\) of the fabricated GFETs at the operating point at which they exhibit the largest voltage gain \({A}_{{\rm{v}}}\).
