Figure 3
From: High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide
The highest gain in each of the fabricated GFETs at 10 MHz. (a) The open circuit voltage gain \({A}_{{\rm{v}}}\) as a function of the gate length L. (b) The forward gain \({S}_{21}\) as a function of \(W/L\). The highest value of 12.5 dB was obtained for \(W=100\) μm and \(L=1.1\) μm. A \(W/L\) fit is suggested by the black line because \({S}_{21}\) scales with \({g}_{{\rm{m}}}\) and therefore with \(W/L\).
