Figure 4
From: High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide
The largest values of the high-frequency transistor response parameters of each fabricated GFET as a function of gate length \(L\). (a) The cuttof frequency \({f}_{{\rm{T}}}\) and (b) maximum oscillation frequency \({f}_{{\rm{\max }}}\). A \({L}^{-1}\) fit is suggested by the black line in both plots.
