Figure 5
From: High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide
The maximum oscillation frequency \({f}_{{\rm{\max }}}\) as a function of the cutoff frequency \({f}_{{\rm{T}}}\) of each fabricated GFET for different gate lengths \(L\) and channel widths \(W\). The ratio \({f}_{{\rm{\max }}}/{f}_{{\rm{T}}}\) varies between 1 and 3.
