Figure 2
From: Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application
First-principle molecular dynamic calculations at T = 300 K for ML-SnO (a) and BL-SnO (b) on Si(001) surface. The top panel and the middle panel represent the temperature and total energy respectively as a function of time. The bottom panel shows the snapshot of the corresponding molecular dynamic simulations.
