Figure 2
From: Photo-acoustic spectroscopy revealing resonant absorption of self-assembled GaAs-based nanowires

(a) SEM edge view of Sample A with NWs of L = (4750 ± 34)nm, D = (138 ± 5)nm. (b) Tilted (30°) SEM image of 3D distribution of Sample A.
From: Photo-acoustic spectroscopy revealing resonant absorption of self-assembled GaAs-based nanowires
(a) SEM edge view of Sample A with NWs of L = (4750 ± 34)nm, D = (138 ± 5)nm. (b) Tilted (30°) SEM image of 3D distribution of Sample A.