Table 1 Characteristic geometric parameters for the four samples together with their standard deviations.

From: Photo-acoustic spectroscopy revealing resonant absorption of self-assembled GaAs-based nanowires

Sample

L [nm]

D [nm]

tAlGaAs [nm]

tGaAs [nm]

A

4750 ± 34

138 ± 5

3.5

0.7

B

5190 ± 64

151 ± 5

8.6

1.7

C

4600 ± 52

165 ± 6

11.7

5.8

D

4690 ± 47

197 ± 9

27.7

5.5

  1. The four samples exhibit low fabrication error margins.
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