Figure 2
From: Preparing local strain patterns in graphene by atomic force microscope based indentation
Raman investigation of strain patterns. (a,b) AFM images of an indentation pattern of lines and dots. Dots: nearest neighbor spacing 40 nm. Lines: distance between lines 40 nm. (c,d) Raman map of the 2D peak position for each pattern. Inset: definition of the polarizer angle θ with respect to the pattern. Based on AFM measurements, the orientation of the pattern in the Raman measurement is shown by the sketch of the respective pattern (gray lines and gray dots). (e, f) 2D peak shifts of the strain pattern (red) and unperturbed graphene (blue). Gray lines and dots at the center of the plot show the orientation of the patterns with respect to θ. Spectra were measured using 633 nm, linearly polarized excitation. The polarization angle was rotated in 12° increments.
