Figure 3
From: Preparing local strain patterns in graphene by atomic force microscope based indentation
Pseudo-magnetic field and custom strain patterns. (a) AFM image of a dot pattern measured with a sharp AFM tip (2 nm radius of curvature). (b) Pseudo-magnetic field pattern calculated from the height profile in (a). Dashed circle marks indentation dot. (c) Gaussian fits to AFM height profiles. (d) Pseudo-magnetic field calculated for an ideal Gaussian depression with parameters of 1 nm depth and 7 nm variance, similar to the indentation dot marked in (a,b). (e) Map of the 2D peak position for a strain pattern created in the shape of the initials of our institute. The pattern is composed of a parallel line pattern, such as in Fig. 2a with 60 nm line spacing, shaped as the letters MFA. Raman map was measured using 532 nm excitation.
