Figure 1
From: One-dimensional electron gas in strained lateral heterostructures of single layer materials
Electron confinement in lateral MoS2/WS2 heterojunction. (a) 80-atoms model of the heterojunction. (b,c) Electrostatic potential energy profile across the heterojunction without strain and with the strain of ϵ 1 = 0.1, respectively. The scan is taken between points with the fractional coordinates (0, 1/2, 0) and (1, 1/2, 0). The built-in electric field corresponds to a macroscopic slope of the potential energy. (d,e) The electron wavefunction amplitude |ψ e(r)|2 represents the lowest unoccupied state in unstrained and strained heterostructures, respectively. The strain-induced electric field confines electrons forming a one-dimensional conducting channel along the MoS2/WS2 interface. The band diagrams show the spatial evolution of the conduction band edge (CBE) schematically to assist with interpretation of the wavefunction plot.
