Figure 2 | Scientific Reports

Figure 2

From: Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications

Figure 2

SEM images of various via-holes formed on a SiC substrate using optimized parameters for the ICP-RIE technique. (a) Mask opening widths of 35 µm, 25 µm, 20 µm, 100 µm, 70 µm, 70 µm (from the top left, row first). (b) Vertically etched SiC with a complicated pattern and a well-etched sidewall profile. (c) Mask opening width of 70 µm (circular) and 70 µm (square), from left to right. (d) Circular pattern enlarged five times. (e) Circular pattern enlarged ten times.

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