Figure 3 | Scientific Reports

Figure 3

From: Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications

Figure 3

Etching rate and etching profile angle for SiC etching under different gas mixture ratios. (a) Etching rate using BCl3 mixed with Cl2 (black line) and with N2 (red line), demonstrating the high etching rate characteristics of BCl3 + Cl2 gas mixtures. (b) The BCl3 + N2 gas mixture (red line) achieves controllable etching profile angles between 40° and 80°, varying almost linearly with the mixture ratio. In contrast, unstable characteristic is observed for the other gas mixture, BCl3 + Cl2 (black line).

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