Figure 5 | Scientific Reports

Figure 5

From: Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications

Figure 5

ICP etching profiles for different BCl3, BCl3 + Cl2, Cl2, and Cl2 + O2 gas ratios. As indicated, a high etching depth of 1.23 µm and a low etching profile angle (up to 7.63°) can be achieved using Cl2 gas (2.4 sccm) in combination with O2 gas (3.6 sccm), with a compromised etching rate of 411 Å/min and a selectivity of 1:3.03; 30 min fixed etching time.

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