Table 1 Summarization of the detailed information of all experiments conducted in this work.

From: Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications

 

Vertical Etching

Large-angle Bevel Etching

Small-angle Bevel Etching

Gas Mixture

SF6 + O2

BCl3 + N2

BCl3 + Cl2

BCl3

BCl3 + Cl2

Cl2

Cl2 + O2

Totally 25 sccm

Totally 40 sccm

Totally 6 sccm

System Condition

Coil Power: 2000 W

Coil Power: 900 W

Coil Power: 0 W

Platen Power: 200 W

Platen Power: 300 W

Platen Power: 200 W

Applied Pressure: 20 mTorr

Applied Pressure: 5 mTorr

Applied Pressure: 3 mTorr

Etching Time: 5 h

Etching Time: 30 min

Etching Time: 30 min

  1. All of the experiment is based on 4H-SiC substrate, Ni mask is applied in the process of vertical etching and large-angle bevel etching, and AZ4620 photoresist is used as the etching mask for small-angle bevel etching.
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