Figure 3
Memory enhancement with repeated stimulation. (a) Memory retention data recorded after different numbers of identical stimuli. (b) Characteristic relaxation time (τ) obtained through the fitting in panel a and the prefactor (I0) with respect to the number of stimuli (N). (c) The corresponding current through the memory device data recorded continuously throughout the test. The spontaneous decay after each pulse (in black lines) and the overall conductor enhancement can be observed. The voltage profile (in red) applied to the memory device consisting of ten 20 V 1.55 s pulses and a constant 0.5 V read voltage.
