Figure 4
The gate leakage current for Vg = 0~1 V. The small gate leakage current suggests a high quality of the devices, without significant damage by the mobile ions injection and transport.
Figure 4 | Scientific Reports
The gate leakage current for Vg = 0~1 V. The small gate leakage current suggests a high quality of the devices, without significant damage by the mobile ions injection and transport.
