Figure 4
(a) Typical bipolar resistive switching characteristics of the S1 devices. Cumulative probability of (b) leakage current and (c) formation voltage for randomly measured many S1 and S2 devices.
Figure 4 | Scientific Reports
(a) Typical bipolar resistive switching characteristics of the S1 devices. Cumulative probability of (b) leakage current and (c) formation voltage for randomly measured many S1 and S2 devices.
