Figure 7
Variation of band gap (\({E}_{g}^{SOC}\)) as a function of external electric field for (a) AsBiI2 and (b) SbBiI2 monolayers, respectively. The left and right inserts of (a) are LDOSs of edges at −0.5 V/Å and 0.8 V/Å, respectively.
Figure 7 | Scientific Reports
