Figure 6
From: Charge screening strategy for domain pattern control in nano-scale ferroelectric systems
(A) c-domain fraction of PZT films and rods fabricated on LSCO/CeO2/YSZ-buffered on Si substrates and Nb-STO (or SrRuO3/STO) substrates as a function of the inverse rod width. The inverse rod width 0 represents the films. The fractions before the sidewall metallization by Pt are plotted. (B) increased amount of a-domain fraction by the sidewall metallization as a function of the inverse rod width.
