Figure 5
(a) Capacitive extraction current transients of BF-DPB:C60F36 devices with two layers of different dopant concentrations; in the lower doped layer (d = 40 nm) the C60F36 to BF-DPB weight ratio is 0.2% (corresponding to molar ratio of 0.001) in the more heavily doped layer (d = 70 nm) the dopant concentration is varied from 0.4 wt% to 10 wt% (corresponding to molar ratios of 0.002 and 0.057). In (b) the charge-carrier profiles (as determined by Eq. (11)) of four devices with different dopant concentration in the highly doped layer are shown.
