Figure 3
From: Determination of individual contact interfaces in carbon nanotube network-based transistors
(a) Schematic illustration and equivalent circuits with R S and R D of the source and drain ground mode for CNT-TFTs. (b) Measured transfer characteristics for the source and drain ground mode. (c) The difference of R D and R S , i.e., R D  − R S , calculated from two transconductances (g mS and g mD ) obtained from the measured transfer characteristics in the source and drain ground mode. (d) R total vs. 1/(V GS  − V T ) for the channel resistance method (CRM). The combined contact resistance, i.e., sum of R D and R S , is extracted as 7.6, 5.7, and 2.2 kΩ at 1/(V GS  − V T ) = 0 with different densities of CNTs in the network. (e) Normalized R D  + R S vs. L and W for CNT-TFTs with different densities of CNTs in the network.
