Figure 5
The fabrication process of the mid-IR waveguide sensor using Si-on-BTO platform. The epitaxial BTO film was grown on a (001) LAO substrate by PLD and then followed by a-Si thin film deposition through PECVD. Using photolithography and lift-off, the waveguide structure was first defined by a Cr mask, and then transferred to the a-Si layer by RIE.
