Figure 1

(a) Schematic illustration of InGaN digital alloy formed by m MLs GaN and n MLs InN ultra-thin binary layers; (b) Band diagram of InGaN digital alloy formed by 4 MLs GaN and 4 MLs InN binary layers.
(a) Schematic illustration of InGaN digital alloy formed by m MLs GaN and n MLs InN ultra-thin binary layers; (b) Band diagram of InGaN digital alloy formed by 4 MLs GaN and 4 MLs InN binary layers.