Figure 3
Miniband structures of the InGaN digital alloy formed by: (a) 1 ML GaN with 1 ML InN binary layers, (b) 1 ML GaN with 4 MLs InN binary layers, (c) 4 MLs GaN with 1 ML InN binary layers, and (d) 4 MLs GaN with 4 MLs InN binary layers.
Figure 3 | Scientific Reports
