Figure 6
Wave functions of ground state carriers in 50-periods InGaN digital alloy formed by: (a) 1 ML GaN and 1 ML InN binary layers, (b) 4 MLs GaN and 4 MLs InN binary layers.
Figure 6 | Scientific Reports
Wave functions of ground state carriers in 50-periods InGaN digital alloy formed by: (a) 1 ML GaN and 1 ML InN binary layers, (b) 4 MLs GaN and 4 MLs InN binary layers.
