Figure 4
Simulated average weighted reflectance values of Si wafers with different shapes of Si nanostructures as a function of heights and periods: (a) curved cone, (b) nanocone, (c) paraboloid, (e) ellipsoid. The white dashed lines denote a contour line of a 1% reflectance. Schematics of cross sectional views of each nanostructure is illustrated together. The red dashed lines indicate the maximum height of the Si nanostructures to be achieved with a etch selectivity in the CF4/O2 RIE process in this study.
