Figure 7
(a) Schematic of a solar cell with parabolic Si nanostructures of a standard device architecture (top). Cross sectional SEM images of the Si solar cells with nanostructures and micro pyramids (middle, bottom). A heavily doped emitter region beneath a SiNx overcoat layer of a 70 nm thickness was selectively etched by HNA solution. (b) EQE spectra of the solar cells textured with parabolic Si nanostructures by varying a DRE process time. For comparison, the EQE of a solar cell based on a planar wafer without texturing is plotted together. The scale bar in the SEM image of the parabolic Si nanostructures is 500 nm.
