Figure 1
From: Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
Temperature dependent Hall effect measurements conducted on the MgZnO/ZnO bilayer and constituent single-layer ZnO and MgZnO films on c-sapphire substrate, which yield electron mobility and concentration. At RT, the bilayer exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/sapphire film grown under the same conditions.
