Figure 1
Schematic of the experimental setup for R C measurements via laser spike annealing. We use a CO2 laser with a 60 W continuous wave (CW) maximum output, operating at a wavelength of 10.6 μm. Compatible with this wavelength, intrinsic (undoped) Si, which has low absorption at 10.6 μm32,51, is selected as the heat sink material. For the photo-thermal absorbing layer, we use 30 nm tungsten (W)52, which is electrically insulated with 30 nm Si3N4 to prevent reflective thick film behavior53 from the ~1 μm Au-Cu-Si ternary alloy library. This setup is mounted onto a fixture with adjustable height (z) for laser focus while the laser optics are motorized on two axes (x and y) such that the laser can be delivered to the substrate at known positions and scan speeds. Altering the laser scan speed, in this case v x, varies the temperature profile. The samples are characterized using XRD, OM, and EDS mapping.
