Figure 5
(a) Atom arrangement in a grossular-like structure where T1 and T2 are ascribed to the position of silicon, (b) schema of the hydrogarnet substitution: (OH)4 → SiO4 where hydrogens occupied an outer position within the tetrahedron between two unshared system edges (modified from ref. 37). (c) Atom arrangement assumed in mayenite-like structure with selected hydrogarnet defect where T1 and T2 are the silicon position. (d) Raman spectra of chlormayenite crystal measured in depth profile and fitted by Voigt function.
