Figure 5

Electrical characteristics of the C8-BTBT-based OFETs on SiO2/Si and HfO2/Si. (a) Transfer characteristics at a drain voltage of −20 V. (b) Output characteristics at different gate voltages of a device using SiO2. (c) Transfer characteristics at a drain voltage of −4 V. (d) Output characteristics at different gate voltages of a device using HfO2.