Figure 6
From: Evaluation of the concentration of point defects in GaN
The S and W parameters for GaN. The layer-specific values for samples H3 and H202 are presented with diamond and hexagonal filled markers, respectively. Typical parameters for the GaN lattice, isolated VGa, VGa − mH and VGaON complexes are shown for comparison with empty symbols. The arrow indicates the signal evolution for VGa − nVN with n ≥ 1. The upper dashed line shows the trend for in-grown VGa presumably complexed with other defects.
